MMBT5551M3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

REACH SVHC :

No SVHC

Pin Count :

3

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

180V

Emitter Base Voltage (VEBO) :

6V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

50nA

Max Power Dissipation :

640mW

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Base Part Number :

MMBT5551

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

60mA

Transistor Type :

NPN

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

Number of Pins :

3

Max Breakdown Voltage :

160V

Terminal Form :

Flat

Package / Case :

SOT-723

Collector Emitter Voltage (VCEO) :

160V

Transistor Element Material :

SILICON

Published :

2009

Number of Elements :

1

Polarity/Channel Type :

NPN

Power - Max :

265mW

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

160V

ECCN Code :

EAR99

Power Dissipation :

640mW