MMBT5551LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

600mA

Max Breakdown Voltage :

160V

Radiation Hardening :

No

Transistor Type :

NPN

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

3

REACH SVHC :

No SVHC

Contact Plating :

Tin

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

200mV

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

160V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Length :

2.9mm

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

600mA

Surface Mount :

yes

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Collector Base Voltage (VCBO) :

180V

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

6V

Height :

1.11mm

Voltage - Rated DC :

160V

VCEsat-Max :

0.2 V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation :

225mW

Number of Elements :

1

Pin Count :

3

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Base Part Number :

MMBT5551

Weight :

4.535924g

Number of Pins :

3

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

160V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

80

Width :

1.3mm

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

2006

Terminal Form :

Gull wing

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

225mW

Current - Collector Cutoff (Max) :

100nA