MMBT5551
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- Mfr.Part #
- MMBT5551
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT23-3
- Stock
- 180,000
- In Stock ：
- 180,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 160V
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 600mA
- Power Dissipation :
- 300mW
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Base Part Number :
- MMBT5551
- Number of Terminations :
- 3
- hFE Min :
- 30
- Factory Lead Time :
- 13 Weeks
- Height :
- 1.1mm
- Voltage - Rated DC :
- 160V
- Gain Bandwidth Product :
- 300MHz
- ECCN Code :
- EAR99
- Current Rating :
- 200mA
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Weight :
- 7.994566mg
- Collector Emitter Breakdown Voltage :
- 160V
- Series :
- Automotive, AEC-Q101
- Published :
- 2008
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- 200mV
- Max Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Continuous Collector Current :
- 200mA
- Length :
- 3.05mm
- Max Junction Temperature (Tj) :
- 150°C
- Max Breakdown Voltage :
- 160V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 180V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Datasheets
- MMBT5551
NPN -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5551-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Continuous collector voltages of 200mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 160V volts.During maximum operation, collector current can be as low as 600mA volts.
MMBT5551-7-F Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT5551-7-F Applications
There are a lot of Diodes Incorporated
MMBT5551-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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