MMBT5551

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Mfr.Part #
MMBT5551
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 160V 0.6A SOT23-3
Stock
180,000
In Stock :
180,000

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
200mV @ 5mA, 50mA
Transition Frequency :
100MHz
Voltage - Collector Emitter Breakdown (Max) :
160V
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
100MHz
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
COMMERCIAL
Packaging :
Tape and Reel (TR)
Number of Terminations :
3
Package / Case :
TO-236-3, SC-59, SOT-23-3
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Dual
Transistor Element Material :
SILICON
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
NPN
Mounting Type :
Surface Mount
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
Gull wing
Current - Collector (Ic) (Max) :
600mA
Peak Reflow Temperature (Cel) :
260
Surface Mount :
yes
Current - Collector Cutoff (Max) :
50nA ICBO
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA 5V
Pin Count :
3
JESD-30 Code :
R-PDSO-G3
Terminal Finish :
MATTE TIN
Power - Max :
350mW
Datasheets
MMBT5551
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. MMBT5551 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, MMBT5551 pinout, MMBT5551 datasheet PDF, MMBT5551 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. MMBT5551 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. MMBT5551


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT5551 Overview


In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 160V maximal voltage in the device due to collector-emitter breakdown.

MMBT5551 Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz


MMBT5551 Applications


There are a lot of Rochester Electronics, LLC
MMBT5551 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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