MMBT5550LT3G
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- Mfr.Part #
- MMBT5550LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A SOT23-3
- Stock
- 8,143
- In Stock ：
- 8,143
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Collector Emitter Saturation Voltage :
- 150mV
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- hFE Min :
- 60
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- VCEsat-Max :
- 0.25 V
- Collector Base Voltage (VCBO) :
- 160V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 225mW
- Current Rating :
- 600mA
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Voltage - Rated DC :
- 140V
- Max Collector Current :
- 60mA
- Base Part Number :
- MMBT5550
- Collector Emitter Voltage (VCEO) :
- 140V
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- Gull wing
- Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 140V
- Published :
- 2007
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 140V
- Datasheets
- MMBT5550LT3G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON N-CHANNEL TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5550LT3G Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 140V volts can be used.A maximum collector current of 60mA volts is possible.
MMBT5550LT3G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
MMBT5550LT3G Applications
There are a lot of ON Semiconductor
MMBT5550LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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