MMBT5550LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

600mA

Number of Elements :

1

Collector Emitter Saturation Voltage :

150mV

Packaging :

Tape and Reel (TR)

Power Dissipation :

225mW

hFE Min :

60

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Max Power Dissipation :

225mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Height :

1.01mm

VCEsat-Max :

0.25 V

Terminal Form :

Gull wing

Surface Mount :

yes

Width :

1.4mm

Transistor Application :

SWITCHING

Max Breakdown Voltage :

140V

Collector Base Voltage (VCBO) :

160V

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

100nA

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

REACH SVHC :

No SVHC

Length :

3.04mm

Terminal Position :

Dual

Weight :

4.535924g

Pin Count :

3

Collector Emitter Voltage (VCEO) :

140V

Current Rating :

600mA

Factory Lead Time :

4 Weeks

Base Part Number :

MMBT5550

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Voltage - Rated DC :

140V

Radiation Hardening :

No

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA

Lead Free :

Lead Free

Number of Pins :

3

Collector Emitter Breakdown Voltage :

140V

JESD-609 Code :

e3

Published :

1998

Type :

GENERAL PURPOSE

Operating Temperature :

-55°C~150°C TJ