MMBT5401WT1G
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- Mfr.Part #
- MMBT5401WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.5A SC70-3
- Stock
- 13,115
- In Stock ：
- 13,115
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Max Power Dissipation :
- 400mW
- Collector Emitter Saturation Voltage :
- -200mV
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Gain Bandwidth Product :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Published :
- 2005
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 500mV
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 500mA
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- -160V
- Number of Elements :
- 1
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 150V
- Number of Pins :
- 3
- Datasheets
- MMBT5401WT1G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMBT5401WT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
MMBT5401WT1G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5401WT1G Applications
There are a lot of ON Semiconductor
MMBT5401WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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