MMBT5401-7
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- Mfr.Part #
- MMBT5401-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SMD SOT23-3
- Stock
- 17,864
- In Stock ：
- 17,864
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Terminal Position :
- Dual
- Voltage :
- 150V
- Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Continuous Collector Current :
- -200mA
- Length :
- 3.05mm
- Current Rating :
- -200mA
- Max Junction Temperature (Tj) :
- 150°C
- Transition Frequency :
- 100MHz
- Current :
- 2A
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -500mV
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- -150V
- Terminal Form :
- Gull wing
- Height :
- 1.1mm
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Published :
- 2008
- Max Collector Current :
- -600mA
- Max Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- -150V
- Lead Free :
- Lead Free
- VCEsat-Max :
- 0.5 V
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -160V
- Series :
- Automotive, AEC-Q101
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector-Base Capacitance-Max :
- 6pF
- Factory Lead Time :
- 19 Weeks
- Weight :
- 7.994566mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 600mA
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Voltage - Rated DC :
- -150V
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e3
- hFE Min :
- 60
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Base Part Number :
- MMBT5401
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 150V
- Power Dissipation :
- 310mW
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Datasheets
- MMBT5401-7
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5401-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -200mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 150V volts before it breaks down.A maximum collector current of -600mA volts can be achieved.
MMBT5401-7-F Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 100MHz
MMBT5401-7-F Applications
There are a lot of Diodes Incorporated
MMBT5401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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