MMBT5088LT1
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- Mfr.Part #
- MMBT5088LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 50MA SOT23
- Stock
- 3,153
- In Stock ：
- 3,153
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 35V
- Current Rating :
- 50mA
- Max Breakdown Voltage :
- 30V
- Gain Bandwidth Product :
- 50MHz
- Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Length :
- 3.04mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- hFE Min :
- 300
- Frequency :
- 50MHz
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Published :
- 2005
- Terminal Form :
- Gull wing
- Max Collector Current :
- 50mA
- Height :
- 1.01mm
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 30V
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Base Part Number :
- MMBT5088
- Number of Pins :
- 3
- Width :
- 1.4mm
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Datasheets
- MMBT5088LT1
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5088LT1G Overview
This device has a DC current gain of 300 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 50mA volts is possible.
MMBT5088LT1G Features
the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5088LT1G Applications
There are a lot of ON Semiconductor
MMBT5088LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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