MMBT5088LT1
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- Mfr.Part #
- MMBT5088LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 50MA SOT23
- Stock
- 3,153
- In Stock ：
- 3,153
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- hFE Min :
- 300
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Max Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- Surface Mount :
- yes
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Height :
- 1.01mm
- Collector Emitter Voltage (VCEO) :
- 30V
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 50MHz
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 4.5V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 35V
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 50MHz
- Length :
- 3.04mm
- Mounting Type :
- Surface Mount
- Width :
- 1.4mm
- Base Part Number :
- MMBT5088
- Max Collector Current :
- 50mA
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- 30V
- Current Rating :
- 50mA
- Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- MMBT5088LT1
MMBT5088LT1 Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5088LT1G Overview
This device has a DC current gain of 300 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 50mA volts is possible.
MMBT5088LT1G Features
the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5088LT1G Applications
There are a lot of ON Semiconductor
MMBT5088LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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