MMBT5087LT1G
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- Mfr.Part #
- MMBT5087LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.05A SOT23-3
- Stock
- 755
- In Stock ：
- 755
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MMBT5087
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 40MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Power Dissipation :
- 300mW
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 3V
- Pin Count :
- 3
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- -50V
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transition Frequency :
- 40MHz
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- hFE Min :
- 250
- Height :
- 1.016mm
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -300mV
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Current Rating :
- -50mA
- Max Collector Current :
- 50mA
- Width :
- 1.397mm
- Length :
- 3.0226mm
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 40MHz
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Pbfree Code :
- yes
- Datasheets
- MMBT5087LT1G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5087LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.Its current rating is -50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 50mA volts.
MMBT5087LT1G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
MMBT5087LT1G Applications
There are a lot of ON Semiconductor
MMBT5087LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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