MMBT5087LT1G

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Mfr.Part #
MMBT5087LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 50V 0.05A SOT23-3
Stock
755
In Stock :
755

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
50V
Number of Elements :
1
Collector Emitter Breakdown Voltage :
-50V
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
40MHz
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
50V
Transition Frequency :
40MHz
Terminal Position :
Dual
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
-300mV
Element Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100μA 5V
Max Collector Current :
50mA
Frequency :
40MHz
Base Part Number :
MMBT5087
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Voltage - Rated DC :
-50V
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation :
300mW
Width :
1.397mm
Number of Pins :
3
Surface Mount :
yes
Current Rating :
-50mA
Height :
1.016mm
Current - Collector Cutoff (Max) :
50nA ICBO
Radiation Hardening :
No
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
ECCN Code :
EAR99
Package / Case :
TO-236-3, SC-59, SOT-23-3
Number of Terminations :
3
Factory Lead Time :
4 Weeks
Vce Saturation (Max) @ Ib, Ic :
300mV @ 1mA, 10mA
Length :
3.0226mm
Collector Base Voltage (VCBO) :
50V
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Terminal Form :
Gull wing
Max Power Dissipation :
300mW
Pbfree Code :
yes
hFE Min :
250
Mounting Type :
Surface Mount
Published :
2006
Emitter Base Voltage (VEBO) :
3V
Peak Reflow Temperature (Cel) :
260
Datasheets
MMBT5087LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT5087LT1G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBT5087, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, MMBT5087LT1G pinout, MMBT5087LT1G datasheet PDF, MMBT5087LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT5087LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT5087LT1G


PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT5087LT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.Its current rating is -50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 50mA volts.

MMBT5087LT1G Features


the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz


MMBT5087LT1G Applications


There are a lot of ON Semiconductor
MMBT5087LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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