MMBT5087LT1
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- Mfr.Part #
- MMBT5087LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 50MA SOT23
- Stock
- 45,209
- In Stock ：
- 45,209
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -300mV
- Frequency :
- 40MHz
- Published :
- 2006
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Transition Frequency :
- 40MHz
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Width :
- 1.397mm
- Collector Emitter Breakdown Voltage :
- -50V
- Length :
- 3.0226mm
- Radiation Hardening :
- No
- hFE Min :
- 250
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 3V
- Pbfree Code :
- yes
- Height :
- 1.016mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Form :
- Gull wing
- Current Rating :
- -50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 40MHz
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Base Part Number :
- MMBT5087
- Voltage - Rated DC :
- -50V
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Datasheets
- MMBT5087LT1
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5087LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.Its current rating is -50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 50mA volts.
MMBT5087LT1G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
MMBT5087LT1G Applications
There are a lot of ON Semiconductor
MMBT5087LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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