MMBT5087LT1
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- Mfr.Part #
- MMBT5087LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 50MA SOT23
- Stock
- 45,209
- In Stock ：
- 45,209
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 40MHz
- Collector Emitter Breakdown Voltage :
- -50V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Current Rating :
- -50mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Published :
- 2006
- Voltage - Rated DC :
- -50V
- Transistor Type :
- PNP
- Max Collector Current :
- 50mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 40MHz
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 50V
- Width :
- 1.397mm
- Base Part Number :
- MMBT5087
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Length :
- 3.0226mm
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- hFE Min :
- 250
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.016mm
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Emitter Base Voltage (VEBO) :
- 3V
- Max Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- -300mV
- Transition Frequency :
- 40MHz
- Datasheets
- MMBT5087LT1
MMBT5087LT1 Documents
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5087LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.Its current rating is -50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 50mA volts.
MMBT5087LT1G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
MMBT5087LT1G Applications
There are a lot of ON Semiconductor
MMBT5087LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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