MMBT4401WT1G
- Mfr.Part #
- MMBT4401WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SC70-3
- Stock
- 29,117
- In Stock :
- 29,117
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Transition Frequency :
- 250MHz
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 40V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- Base Part Number :
- MMBT4401
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 250MHz
- hFE Min :
- 20
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Power Dissipation :
- 150mW
- Collector Emitter Saturation Voltage :
- 750mV
- Published :
- 2010
- Collector Base Voltage (VCBO) :
- 60V
- Voltage - Rated DC :
- 40V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-70, SOT-323
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Max Power Dissipation :
- 150mW
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 600mA
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Turn Off Time-Max (toff) :
- 255ns
- Current Rating :
- 600mA
- Gain Bandwidth Product :
- 250MHz
- Transistor Application :
- SWITCHING
- Datasheets
- MMBT4401WT1G

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMBT4401WT1G Overview
DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT4401WT1G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT4401WT1G Applications
There are a lot of ON Semiconductor
MMBT4401WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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