MMBT4401WT1G

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Mfr.Part #
MMBT4401WT1G
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS NPN 40V 0.6A SC70-3
Stock
29,117
In Stock :
29,117

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Transition Frequency :
250MHz
Number of Terminations :
3
Max Breakdown Voltage :
40V
REACH SVHC :
No SVHC
Factory Lead Time :
12 Weeks
Base Part Number :
MMBT4401
Lead Free :
Lead Free
Terminal Position :
Dual
Emitter Base Voltage (VEBO) :
6V
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Breakdown Voltage :
40V
Radiation Hardening :
No
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
750mV @ 50mA, 500mA
Operating Temperature :
-55°C~150°C TJ
Frequency :
250MHz
hFE Min :
20
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 1V
Power Dissipation :
150mW
Collector Emitter Saturation Voltage :
750mV
Published :
2010
Collector Base Voltage (VCBO) :
60V
Voltage - Rated DC :
40V
Terminal Form :
Gull wing
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Peak Reflow Temperature (Cel) :
260
Package / Case :
SC-70, SOT-323
Pbfree Code :
yes
Transistor Type :
NPN
Max Power Dissipation :
150mW
Terminal Finish :
Tin (Sn)
Collector Emitter Voltage (VCEO) :
40V
Max Collector Current :
600mA
Transistor Element Material :
SILICON
Number of Elements :
1
Number of Pins :
3
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
Turn Off Time-Max (toff) :
255ns
Current Rating :
600mA
Gain Bandwidth Product :
250MHz
Transistor Application :
SWITCHING
Datasheets
MMBT4401WT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT4401WT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:MMBT4401, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:SC-70, SOT-323, Number of Pins:3, MMBT4401WT1G pinout, MMBT4401WT1G datasheet PDF, MMBT4401WT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT4401WT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT4401WT1G


NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount

MMBT4401WT1G Overview


DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.

MMBT4401WT1G Features


the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz


MMBT4401WT1G Applications


There are a lot of ON Semiconductor
MMBT4401WT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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