MMBT4401WT1
- Mfr.Part #
- MMBT4401WT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SC70-3
- Stock
- 46,827
- In Stock :
- 46,827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 40V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 250MHz
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Current Rating :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Base Part Number :
- MMBT4401
- Transistor Application :
- SWITCHING
- Package / Case :
- SC-70, SOT-323
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Power Dissipation :
- 150mW
- hFE Min :
- 20
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Turn Off Time-Max (toff) :
- 255ns
- Collector Emitter Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 12 Weeks
- Max Power Dissipation :
- 150mW
- Pin Count :
- 3
- Element Configuration :
- Single
- Frequency :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Max Collector Current :
- 600mA
- Published :
- 2010
- Max Breakdown Voltage :
- 40V
- Transition Frequency :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Collector Emitter Saturation Voltage :
- 750mV
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Datasheets
- MMBT4401WT1

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMBT4401WT1G Overview
DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT4401WT1G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT4401WT1G Applications
There are a lot of ON Semiconductor
MMBT4401WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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