MMBT4401
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- Mfr.Part #
- MMBT4401
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 175,799
- In Stock ：
- 175,799
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- hFE Min :
- 40
- Published :
- 2012
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 40V
- Width :
- 1.4mm
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Lead Free :
- Lead Free
- Base Part Number :
- MMBT4401
- Additional Feature :
- High Reliability
- Mounting Type :
- Surface Mount
- Length :
- 3.05mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 250MHz
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Height :
- 1.1mm
- Turn Off Time-Max (toff) :
- 255ns
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 600mA
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 250MHz
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Voltage - Rated DC :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 310mW
- ECCN Code :
- EAR99
- Transition Frequency :
- 250MHz
- Factory Lead Time :
- 19 Weeks
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 600mA
- Max Junction Temperature (Tj) :
- 150°C
- Max Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 750mV
- Max Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Mount :
- Surface Mount
- Datasheets
- MMBT4401
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401-7-F Applications
There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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