MMBT4126LT1
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- Mfr.Part #
- MMBT4126LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS GP PNP 25V SOT23
- Stock
- 6,148
- In Stock ：
- 6,148
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Max Power Dissipation :
- 225mW
- Pbfree Code :
- yes
- hFE Min :
- 120
- Gain Bandwidth Product :
- 250MHz
- Current Rating :
- -200mA
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Base Part Number :
- MMBT4126
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Power - Max :
- 225mW
- Surface Mount :
- yes
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -400mV
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Transistor Element Material :
- SILICON
- Frequency :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 25V
- Published :
- 1998
- Collector Base Voltage (VCBO) :
- 25V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 25V
- Height :
- 1.11mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 200mA
- Transition Frequency :
- 250MHz
- Polarity/Channel Type :
- PNP
- Width :
- 2.64mm
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 4V
- Weight :
- 4.535924g
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 25V
- Length :
- 3.04mm
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Power Dissipation :
- 300mW
- Voltage - Rated DC :
- -25V
- Datasheets
- MMBT4126LT1
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4126LT1G Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT4126LT1G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT4126LT1G Applications
There are a lot of ON Semiconductor
MMBT4126LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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