MMBT3906SL
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- Mfr.Part #
- MMBT3906SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT923F
- Stock
- 157,865
- In Stock ：
- 157,865
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 18 hours ago)
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 227mW
- Width :
- 650μm
- Collector Emitter Voltage (VCEO) :
- 40V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 40V
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -40V
- Collector Emitter Saturation Voltage :
- -250mV
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Max Collector Current :
- 200mA
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- SOT-923F
- Max Power Dissipation :
- 227mW
- Terminal Form :
- Flat
- Transition Frequency :
- 250MHz
- Published :
- 2012
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Base Part Number :
- MMBT3906
- Transistor Element Material :
- SILICON
- Frequency :
- 250MHz
- Height :
- 380μm
- Turn On Time-Max (ton) :
- 70ns
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Length :
- 850μm
- Weight :
- 22mg
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Datasheets
- MMBT3906SL
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-923F Tape & Reel (TR) Surface Mount
MMBT3906SL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
MMBT3906SL Applications
There are a lot of ON Semiconductor
MMBT3906SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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