MMBT3906LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Collector-Base Capacitance-Max :

4.5pF

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Pbfree Code :

yes

Transistor Type :

PNP

VCEsat-Max :

0.4 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

200mA

Radiation Hardening :

No

Lead Free :

Lead Free

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Current Rating :

-200mA

Terminal Finish :

Tin (Sn)

Pin Count :

3

Height :

1.01mm

Base Part Number :

MMBT3906

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn On Time-Max (ton) :

70ns

Collector Base Voltage (VCBO) :

40V

hFE Min :

60

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

-400mV

Length :

3.04mm

JESD-609 Code :

e3

Published :

2006

Gain Bandwidth Product :

250MHz

Voltage - Rated DC :

-40V

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

5V

Frequency :

250MHz

REACH SVHC :

No SVHC

Max Breakdown Voltage :

40V

Polarity/Channel Type :

PNP

Factory Lead Time :

10 Weeks

Number of Pins :

3

Collector Emitter Breakdown Voltage :

40V

Power Dissipation :

300mW

Mounting Type :

Surface Mount

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Width :

1.4mm

Collector Emitter Voltage (VCEO) :

40V

Max Power Dissipation :

225mW

Transition Frequency :

250MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3