MMBT3906
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- Mfr.Part #
- MMBT3906
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23-3
- Stock
- 22,947
- In Stock ：
- 22,947
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2001
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Turn Off Time-Max (toff) :
- 300ns
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA
- Frequency - Transition :
- 300MHz
- Max Collector Current :
- 200mA
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- Power - Max :
- 200mW
- Transition Frequency :
- 300MHz
- JESD-30 Code :
- R-PDSO-G3
- Collector Emitter Breakdown Voltage :
- 40V
- Weight :
- 200.998119mg
- Continuous Collector Current :
- -200mA
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Turn On Time-Max (ton) :
- 70ns
- Collector Emitter Voltage (VCEO) :
- 400mV
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MMBT3906
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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