MMBT3906
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- Mfr.Part #
- MMBT3906
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23
- Stock
- 3,913
- In Stock ：
- 3,913
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 100μA
- Power - Max :
- 200mW
- Frequency - Transition :
- 300MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -200mA
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-G3
- Weight :
- 200.998119mg
- Turn Off Time-Max (toff) :
- 300ns
- Element Configuration :
- Single
- Turn On Time-Max (ton) :
- 70ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 400mV
- Published :
- 2001
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Max Collector Current :
- 200mA
- Max Power Dissipation :
- 200mW
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- MMBT3906
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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