MMBT3904TT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Package / Case :

SC-75, SOT-416

Width :

900μm

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Element Configuration :

Single

Length :

1.65mm

Number of Elements :

1

Termination :

SMD/SMT

Number of Pins :

3

Terminal Position :

Dual

Max Power Dissipation :

200mW

Collector Emitter Saturation Voltage :

300mV

Transistor Type :

NPN

REACH SVHC :

No SVHC

Height :

800μm

Current Rating :

200mA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Max Breakdown Voltage :

40V

Collector Base Voltage (VCBO) :

60V

Surface Mount :

yes

Max Collector Current :

200mA

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

300MHz

Frequency :

300MHz

Gain Bandwidth Product :

300MHz

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

hFE Min :

40

Turn On Time-Max (ton) :

70ns

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Packaging :

Tape and Reel (TR)

Turn Off Time-Max (toff) :

250ns

Collector Emitter Breakdown Voltage :

40V

Contact Plating :

Tin

Base Part Number :

MMBT3904

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

300mW

Lead Free :

Lead Free

Voltage - Rated DC :

40V

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

40V

Pbfree Code :

yes

Published :

2006

Emitter Base Voltage (VEBO) :

6V