MMBT3904LT1H
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- Mfr.Part #
- MMBT3904LT1H
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MMBT3904 - NPN SILICON SWITCHING
- Stock
- 2,330
- In Stock ：
- 2,330
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 40V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Max Power Dissipation :
- 330mW
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Gain Bandwidth Product :
- 300MHz
- Factory Lead Time :
- 4 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Frequency :
- 300MHz
- hFE Min :
- 30
- Current Rating :
- 200mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Max Collector Current :
- 200mA
- Lead Free :
- Lead Free
- Configuration :
- Single
- Turn On Time-Max (ton) :
- 70ns
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 40V
- Power Dissipation :
- 330mW
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Height :
- 1.1mm
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Transition Frequency :
- 300MHz
- Base Part Number :
- MMBT3904
- Collector Emitter Voltage (VCEO) :
- 40V
- Turn Off Time-Max (toff) :
- 250ns
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 300mV
- Datasheets
- MMBT3904LT1H
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3904LT1HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
MMBT3904LT1HTSA1 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
MMBT3904LT1HTSA1 Applications
There are a lot of Infineon Technologies
MMBT3904LT1HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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