MMBT3904LT1G
- Mfr.Part #
- MMBT3904LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT23-3
- Stock
- 123,192
- In Stock :
- 123,192
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn On Time-Max (ton) :
- 70ns
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 200mA
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Published :
- 2006
- Max Breakdown Voltage :
- 40V
- Power Dissipation :
- 225mW
- Terminal Form :
- Gull wing
- Max Collector Current :
- 200mA
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- 200mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 300MHz
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Voltage (VCEO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Frequency :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Height :
- 1.11mm
- Factory Lead Time :
- 10 Weeks
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Turn Off Time-Max (toff) :
- 250ns
- Type :
- GENERAL PURPOSE
- hFE Min :
- 100
- Voltage - Rated DC :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Width :
- 1.3mm
- Base Part Number :
- MMBT3904
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Datasheets
- MMBT3904LT1G

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3904LT1G Description
The NPN transistor MMBT3904LT1G is usually a bipolar transistor with a three-layer structure, which is used for signal amplification. It is a device controlled by current. The negative-positive-negative transistor is denoted by the abbreviation NPN.
MMBT3904LT1G Features
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
? Compliant
? S Prefix for Automotive and Other Applications Requiring Unique
? Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
MMBT3904LT1G Applications
?Automotive
?Applications Requiring Unique Site and Control Change Requirements
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