MMBT3904FZ-7B
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- Mfr.Part #
- MMBT3904FZ-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A 3DFN
- Stock
- 50,991
- In Stock ：
- 50,991
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- NO LEAD
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- 200mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2014
- Transition Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Turn Off Time-Max (toff) :
- 250ns
- Package / Case :
- 3-XFDFN
- Max Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 100
- Number of Elements :
- 1
- JESD-609 Code :
- e4
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Turn On Time-Max (ton) :
- 70ns
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Max Collector Current :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 435mW
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Datasheets
- MMBT3904FZ-7B
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
MMBT3904FZ-7B Overview
This device has a DC current gain of 100 @ 10mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 200mA is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 200mA volts.
MMBT3904FZ-7B Features
the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904FZ-7B Applications
There are a lot of Diodes Incorporated
MMBT3904FZ-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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