MMBT3904FA-7B
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- Mfr.Part #
- MMBT3904FA-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A 3DFN
- Stock
- 2,814
- In Stock ：
- 2,814
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-N2
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 435mW
- Turn On Time-Max (ton) :
- 70ns
- Number of Pins :
- 3
- Base Part Number :
- MMBT3904
- ECCN Code :
- EAR99
- Power Dissipation :
- 435mW
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e4
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Published :
- 2013
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 200mA
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 2
- Gain Bandwidth Product :
- 300MHz
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Continuous Collector Current :
- 200mA
- Collector Base Voltage (VCBO) :
- 60V
- Frequency :
- 300MHz
- Series :
- Automotive, AEC-Q101
- Turn Off Time-Max (toff) :
- 250ns
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- 3-XFDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 40V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Datasheets
- MMBT3904FA-7B
NPN -55°C~150°C TJ 1 Elements 2 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
MMBT3904FA-7B Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
MMBT3904FA-7B Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904FA-7B Applications
There are a lot of Diodes Incorporated
MMBT3904FA-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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