MMBT3904FA-7B

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Mfr.Part #
MMBT3904FA-7B
Manufacturer
Diodes Incorporated
Package / Case
3-XFDFN
Datasheet
Download
Description
TRANS NPN 40V 0.2A 3DFN
Stock
2,814
In Stock :
2,814

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
300mV @ 5mA, 50mA
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Voltage (VCEO) :
40V
Number of Pins :
3
Turn Off Time-Max (toff) :
250ns
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 1V
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
Base Part Number :
MMBT3904
Continuous Collector Current :
200mA
REACH SVHC :
No SVHC
Gain Bandwidth Product :
300MHz
Time@Peak Reflow Temperature-Max (s) :
30
JESD-30 Code :
R-PSSO-N2
ECCN Code :
EAR99
Turn On Time-Max (ton) :
70ns
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Emitter Base Voltage (VEBO) :
6V
Max Breakdown Voltage :
40V
Radiation Hardening :
No
Max Collector Current :
200mA
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
300mV
Element Configuration :
Single
Series :
Automotive, AEC-Q101
Collector Base Voltage (VCBO) :
60V
JESD-609 Code :
e4
Power Dissipation :
435mW
Peak Reflow Temperature (Cel) :
260
Transition Frequency :
300MHz
Frequency :
300MHz
Mount :
Surface Mount
Number of Terminations :
2
Additional Feature :
High Reliability
Transistor Element Material :
SILICON
Factory Lead Time :
15 Weeks
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Case Connection :
COLLECTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2013
Max Power Dissipation :
435mW
Collector Emitter Breakdown Voltage :
40V
Package / Case :
3-XFDFN
Datasheets
MMBT3904FA-7B
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated MMBT3904FA-7B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Base Part Number:MMBT3904, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:3-XFDFN, MMBT3904FA-7B pinout, MMBT3904FA-7B datasheet PDF, MMBT3904FA-7B amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated MMBT3904FA-7B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated MMBT3904FA-7B


NPN -55°C~150°C TJ 1 Elements 2 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount

MMBT3904FA-7B Overview


In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.

MMBT3904FA-7B Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz


MMBT3904FA-7B Applications


There are a lot of Diodes Incorporated
MMBT3904FA-7B applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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