MMBT3646
- Mfr.Part #
- MMBT3646
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A SOT23-3
- Stock
- 2,523
- In Stock :
- 2,523
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Weight :
- 30mg
- Number of Elements :
- 1
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 28ns
- Height :
- 930μm
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 15V
- Base Part Number :
- MMBT3646
- Polarity/Channel Type :
- NPN
- hFE Min :
- 30
- Current Rating :
- 300A
- Current - Collector Cutoff (Max) :
- 500nA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Mount :
- Surface Mount
- Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 15V
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 15V
- Length :
- 2.92mm
- Max Collector Current :
- 300mA
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 15V
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 625mW
- Published :
- 2014
- Transistor Element Material :
- SILICON
- Max Frequency :
- 1MHz
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 40V
- Factory Lead Time :
- 39 Weeks
- Datasheets
- MMBT3646

NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3646 Overview
This device has a DC current gain of 30 @ 30mA 400mV, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 300A.As a result, it can handle voltages as low as 15V volts.The maximum collector current is 300mA volts.
MMBT3646 Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300A
MMBT3646 Applications
There are a lot of ON Semiconductor
MMBT3646 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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