MMBT2907AWT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

PNP

JESD-609 Code :

e3

Max Breakdown Voltage :

60V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Voltage - Rated DC :

-60V

Max Power Dissipation :

150mW

Base Part Number :

MMBT2907A

Width :

1.35mm

Height :

700μm

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

60V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Collector Emitter Saturation Voltage :

-1.6V

Collector Emitter Voltage (VCEO) :

60V

Current Rating :

-600mA

Number of Terminations :

3

Power Dissipation :

150mW

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

60V

Element Configuration :

Single

Turn On Time-Max (ton) :

45ns

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

200MHz

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Max Collector Current :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Package / Case :

SC-70, SOT-323

Length :

2.2mm

Transition Frequency :

200MHz

hFE Min :

75

RoHS Status :

ROHS3 Compliant

Frequency :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Contact Plating :

Tin

Pin Count :

3

REACH SVHC :

No SVHC

Surface Mount :

yes

Number of Pins :

3

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

5 Weeks

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Published :

2004

Terminal Position :

Dual