MMBT2907AM3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

265mW

Base Part Number :

MMBT2907A

Pin Count :

3

Frequency :

200MHz

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Turn On Time-Max (ton) :

45ns

Element Configuration :

Single

Package / Case :

SOT-723

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Published :

2009

Max Breakdown Voltage :

60V

Terminal Form :

Flat

Transition Frequency :

200MHz

Power Dissipation :

640mW

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

10nA ICBO

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

60V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

600mA

Terminal Position :

Dual

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Pbfree Code :

yes

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Transistor Type :

PNP

Number of Elements :

1

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

60V

Collector Base Voltage (VCBO) :

60V

Gain Bandwidth Product :

200MHz

Max Power Dissipation :

640mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V