MMBT2484LT1
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- Mfr.Part #
- MMBT2484LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS GP NPN 60V SOT23
- Stock
- 36,803
- In Stock ：
- 36,803
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Height :
- 1.01mm
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Element Configuration :
- Single
- Length :
- 3.04mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 60V
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Base Part Number :
- MMBT2484
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 250
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 300mW
- Max Power Dissipation :
- 225mW
- Published :
- 2005
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 350mV
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 100µA, 1mA
- Radiation Hardening :
- No
- Max Frequency :
- 1MHz
- Current Rating :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 1mA 5V
- Datasheets
- MMBT2484LT1
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2484LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 100μA, 1mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 100mA volts.
MMBT2484LT1G Features
the DC current gain for this device is 250 @ 1mA 5V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
MMBT2484LT1G Applications
There are a lot of ON Semiconductor
MMBT2484LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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