MMBT2369ALT1G
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- Mfr.Part #
- MMBT2369ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A SOT23-3
- Stock
- 25,711
- In Stock ：
- 25,711
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Height :
- 940μm
- Max Breakdown Voltage :
- 15V
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Emitter Base Voltage (VEBO) :
- 4.5V
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Termination :
- SMD/SMT
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 15V
- Max Power Dissipation :
- 225mW
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 15V
- Current Rating :
- 200mA
- Transition Frequency :
- 500MHz
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Base Part Number :
- MMBT2369A
- hFE Min :
- 40
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 400nA
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Collector Base Voltage (VCBO) :
- 40V
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Pin Count :
- 3
- Power Dissipation :
- 300mW
- Width :
- 1.3mm
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 200mA
- Published :
- 2005
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBT2369ALT1G
NPN -55°C~150°C TJ 400nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2369ALT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 100mA 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 500MHz is present in the part.There is a breakdown input voltage of 15V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
MMBT2369ALT1G Features
the DC current gain for this device is 20 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369ALT1G Applications
There are a lot of ON Semiconductor
MMBT2369ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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