MMBT2222ALP4-7B
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- Mfr.Part #
- MMBT2222ALP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A 3DFN
- Stock
- 71
- In Stock ：
- 71
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Base Voltage (VCBO) :
- 75V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2013
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Terminations :
- 3
- Power - Max :
- 460mW
- Continuous Collector Current :
- 600mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 600mA
- Transition Frequency :
- 300MHz
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Series :
- Automotive, AEC-Q101
- Length :
- 1.05mm
- Package / Case :
- 3-XFDFN
- JESD-609 Code :
- e4
- Width :
- 650μm
- Max Power Dissipation :
- 1W
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Base Part Number :
- MMBT2222A
- Max Frequency :
- 300MHz
- Additional Feature :
- High Reliability
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Manufacturer Package Identifier :
- MMBT2222ALP4-7B
- Height :
- 350μm
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 300MHz
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Elements :
- 1
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Turn Off Time-Max (toff) :
- 285ns
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- 300mV
- Factory Lead Time :
- 15 Weeks
- Max Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- NPN
- Datasheets
- MMBT2222ALP4-7B
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
MMBT2222ALP4-7B Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Continuous collector voltages of 600mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
MMBT2222ALP4-7B Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT2222ALP4-7B Applications
There are a lot of Diodes Incorporated
MMBT2222ALP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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