MMBT2222A,215
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- Mfr.Part #
- MMBT2222A,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA MMBT2222A - SMALL SIGNA
- Stock
- 11,676
- In Stock ：
- 11,676
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 250mW
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Configuration :
- Single
- Base Part Number :
- MMBT2222A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Surface Mount :
- yes
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Type :
- NPN
- Frequency - Transition :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector (Ic) (Max) :
- 600mA
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Turn Off Time-Max (toff) :
- 250ns
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBT2222A,215
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT2222A,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 300MHz.The device has a 40V maximal voltage - Collector Emitter Breakdown.
MMBT2222A,215 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
MMBT2222A,215 Applications
There are a lot of Nexperia USA Inc.
MMBT2222A,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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