MMBFJ309

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Test :

10V

Power Dissipation :

350mW

Factory Lead Time :

6 Weeks

Element Configuration :

Single

Current - Test :

10mA

Max Power Dissipation :

350mW

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

REACH SVHC :

No SVHC

Operating Mode :

Depletion Mode

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

-25V

Length :

2.92mm

Voltage - Rated DC :

25V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Feedback Cap-Max (Crss) :

2.5 pF

Width :

1.3mm

Noise Figure :

3dB

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

25V

Continuous Drain Current (ID) :

30mA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 14 hours ago)

Number of Elements :

1

Breakdown Voltage :

25V

Pbfree Code :

yes

Height :

930μm

Mount :

Surface Mount

Frequency :

450MHz

Terminal Form :

Gull wing

FET Technology :

JUNCTION

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Current Rating :

30mA

Max Operating Temperature :

150°C

Gain :

12dB

Packaging :

Tape and Reel (TR)

Transistor Type :

N-Channel JFET

Weight :

30mg

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Published :

2008

Base Part Number :

MMBFJ309

Lead Free :

Lead Free

JESD-609 Code :

e3

HTS Code :

8541.21.00.95

Number of Pins :

3