MMBFJ112

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Terminal Position :

Dual

Feedback Cap-Max (Crss) :

5 pF

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Max Junction Temperature (Tj) :

150°C

Breakdown Voltage :

-35V

Gate to Source Voltage (Vgs) :

-35V

Mount :

Surface Mount

Factory Lead Time :

42 Weeks

Terminal Form :

Gull wing

Max Power Dissipation :

350mW

Radiation Hardening :

No

Resistance - RDS(On) :

50Ohm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Channels :

1

FET Technology :

JUNCTION

Current Rating :

5mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Operating Mode :

Depletion Mode

Drain to Source Resistance :

50Ohm

Published :

2000

REACH SVHC :

No SVHC

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Terminations :

3

Height :

1.11mm

Width :

1.3mm

Continuous Drain Current (ID) :

5mA

Length :

2.92mm

Lead Free :

Lead Free

Number of Elements :

1

Voltage - Rated DC :

35V

Drain to Source Voltage (Vdss) :

35V

Voltage - Cutoff (VGS off) @ Id :

1V @ 1μA

Power Dissipation :

350mW

ECCN Code :

EAR99

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Weight :

30mg

Transistor Element Material :

SILICON

Contact Plating :

Tin

Base Part Number :

MBFJ112