MMBFJ112

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Mount :

Surface Mount

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Operating Mode :

Depletion Mode

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

-35V

Number of Elements :

1

Resistance - RDS(On) :

50Ohm

Max Junction Temperature (Tj) :

150°C

Length :

2.92mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Current Rating :

5mA

Factory Lead Time :

42 Weeks

Power Dissipation :

350mW

Number of Pins :

3

Width :

1.3mm

Voltage - Rated DC :

35V

Published :

2000

REACH SVHC :

No SVHC

Element Configuration :

Single

Drain to Source Resistance :

50Ohm

Weight :

30mg

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Max Power Dissipation :

350mW

Drain to Source Voltage (Vdss) :

35V

Height :

1.11mm

Base Part Number :

MBFJ112

JESD-609 Code :

e3

FET Technology :

JUNCTION

Number of Channels :

1

Radiation Hardening :

No

Number of Terminations :

3

Breakdown Voltage :

-35V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

Feedback Cap-Max (Crss) :

5 pF

Lead Free :

Lead Free

Continuous Drain Current (ID) :

5mA

Voltage - Cutoff (VGS off) @ Id :

1V @ 1μA