MJF31C
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- Mfr.Part #
- MJF31C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220FP
- Stock
- 15,357
- In Stock ：
- 15,357
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 2W
- Height :
- 16.12mm
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Width :
- 4.9mm
- Gain Bandwidth Product :
- 3MHz
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Number of Terminations :
- 3
- Published :
- 2008
- Package / Case :
- TO-220-3 Full Pack
- Case Connection :
- Isolated
- Length :
- 10.63mm
- Power Dissipation :
- 2W
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 3MHz
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 100V
- Frequency :
- 3MHz
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 300μA
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- hFE Min :
- 25
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Additional Feature :
- UL RECOGNIZED
- Collector Emitter Saturation Voltage :
- 1.2V
- Datasheets
- MJF31C
NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF31CG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
MJF31CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJF31CG Applications
There are a lot of ON Semiconductor
MJF31CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| MJF3055 | onsemi | 13,705 | TRANS NPN 90V 10A TO220FP |
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| MJF32CG | onsemi | 4,249 | TRANS PNP 100V 3A TO220FP |
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