MJF3055G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

60V

Operating Temperature :

-55°C~150°C TJ

Length :

6.35mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Pin Count :

3

Number of Terminations :

3

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 3.3A, 10A

Gain Bandwidth Product :

2MHz

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Current - Collector Cutoff (Max) :

1μA

Packaging :

Tube

Number of Elements :

1

Power Dissipation :

2W

Transistor Application :

SWITCHING

Frequency :

2MHz

Surface Mount :

No

Height :

6.35mm

Width :

25.4mm

Pbfree Code :

yes

Transition Frequency :

2MHz

Weight :

4.535924g

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

hFE Min :

20

Max Collector Current :

10A

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

1V

Additional Feature :

UL RECOGNIZED

Element Configuration :

Single

Collector Base Voltage (VCBO) :

90V

Collector Emitter Voltage (VCEO) :

90V

Max Power Dissipation :

30W

Factory Lead Time :

2 Weeks

Package / Case :

TO-220-3 Full Pack

Current Rating :

10A

ECCN Code :

EAR99

Radiation Hardening :

No

Published :

2000

Collector Emitter Breakdown Voltage :

90V