MJF3055G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Factory Lead Time :

2 Weeks

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 3.3A, 10A

Package / Case :

TO-220-3 Full Pack

Transition Frequency :

2MHz

hFE Min :

20

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Height :

6.35mm

Frequency :

2MHz

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Transistor Type :

NPN

Max Power Dissipation :

30W

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

1V

Additional Feature :

UL RECOGNIZED

Max Collector Current :

10A

Width :

25.4mm

Gain Bandwidth Product :

2MHz

Collector Base Voltage (VCBO) :

90V

Pin Count :

3

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

90V

Case Connection :

Isolated

Length :

6.35mm

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Pbfree Code :

yes

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Published :

2000

Current - Collector Cutoff (Max) :

1μA

Transistor Element Material :

SILICON

Number of Elements :

1

ECCN Code :

EAR99

Mounting Type :

Through Hole

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

90V

Current Rating :

10A

Power Dissipation :

2W

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260