MJF31CG
- Mfr.Part #
- MJF31CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220FP
- Stock
- 15,537
- In Stock :
- 15,537
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2008
- hFE Min :
- 25
- Collector Emitter Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Voltage - Rated DC :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 16.12mm
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Additional Feature :
- UL RECOGNIZED
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Saturation Voltage :
- 1.2V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- Frequency :
- 3MHz
- Transistor Type :
- NPN
- Length :
- 10.63mm
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Max Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Current - Collector Cutoff (Max) :
- 300μA
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-220-3 Full Pack
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Case Connection :
- Isolated
- Terminal Finish :
- Tin (Sn)
- Width :
- 4.9mm
- REACH SVHC :
- No SVHC
- Current Rating :
- 3A
- Polarity/Channel Type :
- NPN
- Datasheets
- MJF31CG

NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
MJF31CG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
MJF31CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJF31CG Applications
There are a lot of ON Semiconductor
MJF31CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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