MJE350G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

3V

Transistor Application :

SWITCHING

Max Collector Current :

500mA

Max Power Dissipation :

20W

Collector Emitter Breakdown Voltage :

300V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Weight :

4.535924g

Collector Base Voltage (VCBO) :

3V

Element Configuration :

Single

Pbfree Code :

yes

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

300V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Package / Case :

TO-225AA, TO-126-3

Polarity/Channel Type :

PNP

Current Rating :

-500mA

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Length :

7.7978mm

Time@Peak Reflow Temperature-Max (s) :

40

Height :

11.0998mm

Voltage - Rated DC :

-300V

Base Part Number :

MJE350

Power Dissipation :

20W

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Current - Collector Cutoff (Max) :

100μA ICBO

Packaging :

Bulk

REACH SVHC :

No SVHC

Published :

2006

Radiation Hardening :

No

Operating Temperature :

-65°C~150°C TJ

Pin Count :

3

Transistor Type :

PNP

Number of Terminations :

3

Width :

2.9972mm

hFE Min :

30

Number of Pins :

3