MJD350T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Collector Emitter Voltage (VCEO) :

300V

Base Part Number :

MJD35

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

-300V

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

300V

Factory Lead Time :

8 Weeks

Height :

2.4mm

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Form :

Gull wing

Current Rating :

-500mA

Current - Collector Cutoff (Max) :

100μA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 6 months ago)

Polarity/Channel Type :

PNP

hFE Min :

30

Number of Pins :

3

Transistor Application :

SWITCHING

Width :

6.2mm

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Case Connection :

COLLECTOR

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Max Collector Current :

500mA

Transistor Type :

PNP

Element Configuration :

Single

Max Breakdown Voltage :

300V

Lead Free :

Lead Free

Length :

6.6mm

Max Power Dissipation :

15W

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Power Dissipation :

15W

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

3V

Collector Base Voltage (VCBO) :

300V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

Packaging :

Cut Tape (CT)