MJD3055G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Weight :

4.535924g

Radiation Hardening :

No

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Base Part Number :

MJD3055

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Gain Bandwidth Product :

2MHz

Surface Mount :

yes

Transistor Type :

NPN

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Power Dissipation :

1.75W

Pbfree Code :

yes

Max Collector Current :

10A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Emitter Saturation Voltage :

1.1V

Published :

2002

Frequency :

2MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

50μA

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.22mm

Element Configuration :

Single

Collector Base Voltage (VCBO) :

70V

ECCN Code :

EAR99

hFE Min :

20

Max Power Dissipation :

1.75W

Voltage - Rated DC :

60V

Transition Frequency :

2MHz

Polarity/Channel Type :

NPN

Length :

6.73mm

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Current Rating :

10A

Pin Count :

3

Transistor Application :

AMPLIFIER

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Height :

2.38mm

Collector Emitter Breakdown Voltage :

60V