MJD31C1
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- Mfr.Part #
- MJD31C1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,823
- In Stock ：
- 3,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Length :
- 6.73mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tube
- Transition Frequency :
- 3MHz
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSIP-T3
- Height :
- 6.22mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.56W
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1.2V
- Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 10V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 3MHz
- Current Rating :
- 3A
- Number of Terminations :
- 3
- Base Part Number :
- MJD31
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50μA
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 25
- Collector Base Voltage (VCBO) :
- 100V
- Case Connection :
- COLLECTOR
- Width :
- 2.38mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Voltage - Rated DC :
- 100V
- Max Collector Current :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Published :
- 2005
- Power Dissipation :
- 1.56W
- Datasheets
- MJD31C1
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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