MJD340G
- Mfr.Part #
- MJD340G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A DPAK
- Stock
- 39,749
- In Stock :
- 39,749
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- 300V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 300V
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Base Part Number :
- MJD340
- Power Dissipation :
- 1.56W
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Current Rating :
- 500mA
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Max Frequency :
- 10MHz
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Height :
- 2.3876mm
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Width :
- 6.223mm
- Length :
- 6.7056mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Base Voltage (VCBO) :
- 300V
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Saturation Voltage :
- 1V
- hFE Min :
- 30
- Emitter Base Voltage (VEBO) :
- 3V
- Max Power Dissipation :
- 15W
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Voltage (VCEO) :
- 300V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Published :
- 2003
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Datasheets
- MJD340G

NPN -65°C~150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD340G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Emitter base voltages of 3V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.A maximum collector current of 500mA volts can be achieved.
MJD340G Features
the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA
MJD340G Applications
There are a lot of ON Semiconductor
MJD340G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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