MJD32T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

1.2V

Max Breakdown Voltage :

100V

Published :

2005

Terminal Form :

Gull wing

Current Rating :

-3A

Max Collector Current :

3A

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

40V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Frequency :

3MHz

Voltage - Rated DC :

-40V

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Surface Mount :

yes

Radiation Hardening :

No

Gain Bandwidth Product :

3MHz

Number of Terminations :

2

Transition Frequency :

3MHz

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Number of Pins :

3

Operating Temperature :

-65°C~150°C TJ

Current - Collector Cutoff (Max) :

50μA

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

25

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Max Power Dissipation :

1.56W

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Pin Count :

3

Factory Lead Time :

8 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Base Part Number :

MJD32

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

1.56W

Collector Emitter Voltage (VCEO) :

40V

Collector Base Voltage (VCBO) :

40V