MJD32CTF
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- Mfr.Part #
- MJD32CTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TO252-3
- Stock
- 32,356
- In Stock ：
- 32,356
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Base Part Number :
- MJD32
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50μA
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 2
- Width :
- 6.1mm
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Transition Frequency :
- 3MHz
- Contact Plating :
- Tin
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Frequency :
- 3MHz
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 100V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Height :
- 2.3mm
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 3MHz
- Lead Free :
- Lead Free
- Published :
- 2001
- Current Rating :
- -3A
- Length :
- 6.6mm
- Number of Pins :
- 3
- Weight :
- 260.37mg
- Collector Emitter Saturation Voltage :
- -1.2V
- hFE Min :
- 10
- Max Collector Current :
- 3A
- Power Dissipation :
- 1.56W
- Max Power Dissipation :
- 1.56W
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 6 Weeks
- Datasheets
- MJD32CTF
PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CTF Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
MJD32CTF Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CTF Applications
There are a lot of ON Semiconductor
MJD32CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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