MJD32CTF
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- Mfr.Part #
- MJD32CTF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 32,356
- In Stock ：
- 32,356
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 3MHz
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 50μA
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -1.2V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- -100V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 6.1mm
- Frequency :
- 3MHz
- Power Dissipation :
- 1.56W
- Published :
- 2001
- JESD-30 Code :
- R-PSSO-G2
- hFE Min :
- 10
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- JESD-609 Code :
- e3
- Length :
- 6.6mm
- Gain Bandwidth Product :
- 3MHz
- Voltage - Rated DC :
- -100V
- Base Part Number :
- MJD32
- Factory Lead Time :
- 6 Weeks
- Height :
- 2.3mm
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 260.37mg
- Max Power Dissipation :
- 1.56W
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Current Rating :
- -3A
- Number of Terminations :
- 2
- Datasheets
- MJD32CTF
,%20SC-63.jpg)
PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CTF Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
MJD32CTF Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CTF Applications
There are a lot of ON Semiconductor
MJD32CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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