MJD32CT4G
- Mfr.Part #
- MJD32CT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 24,750
- In Stock :
- 24,750
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 2.38mm
- Max Power Dissipation :
- 1.56W
- Length :
- 6.73mm
- Contact Plating :
- Tin
- Transition Frequency :
- 3MHz
- Published :
- 2001
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- hFE Min :
- 25
- Max Breakdown Voltage :
- 100V
- Width :
- 6.22mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- MJD32
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Current Rating :
- -3A
- Termination :
- SMD/SMT
- Weight :
- 4.535924g
- Gain Bandwidth Product :
- 3MHz
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Power Dissipation :
- 1.56W
- Voltage - Rated DC :
- -100V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Frequency :
- 3MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 1.2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50μA
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- MJD32CT4G

PNP -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.
MJD32CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CT4G Applications
There are a lot of ON Semiconductor
MJD32CT4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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