MJD32CT4G

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Mfr.Part #
MJD32CT4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 100V 3A DPAK
Stock
24,750
In Stock :
24,750

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
2.38mm
Max Power Dissipation :
1.56W
Length :
6.73mm
Contact Plating :
Tin
Transition Frequency :
3MHz
Published :
2001
Terminal Form :
Gull wing
Surface Mount :
yes
hFE Min :
25
Max Breakdown Voltage :
100V
Width :
6.22mm
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
REACH SVHC :
No SVHC
Factory Lead Time :
8 Weeks
Base Part Number :
MJD32
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 3A 4V
Number of Terminations :
2
JESD-30 Code :
R-PSSO-G2
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Case Connection :
COLLECTOR
Current Rating :
-3A
Termination :
SMD/SMT
Weight :
4.535924g
Gain Bandwidth Product :
3MHz
Transistor Type :
PNP
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 375mA, 3A
Power Dissipation :
1.56W
Voltage - Rated DC :
-100V
Transistor Element Material :
SILICON
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Number of Pins :
3
Pbfree Code :
yes
Polarity/Channel Type :
PNP
Frequency :
3MHz
Collector Emitter Voltage (VCEO) :
100V
Max Collector Current :
3A
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Transistor Application :
AMPLIFIER
Collector Emitter Breakdown Voltage :
100V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pin Count :
3
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
100V
Collector Emitter Saturation Voltage :
1.2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
50μA
Emitter Base Voltage (VEBO) :
5V
Lead Free :
Lead Free
Radiation Hardening :
No
Number of Elements :
1
Operating Temperature :
-65°C~150°C TJ
Datasheets
MJD32CT4G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD32CT4G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD32, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-65°C~150°C TJ, MJD32CT4G pinout, MJD32CT4G datasheet PDF, MJD32CT4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD32CT4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD32CT4G


PNP -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD32CT4G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.

MJD32CT4G Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz


MJD32CT4G Applications


There are a lot of ON Semiconductor
MJD32CT4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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