MJD32CT4
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- Mfr.Part #
- MJD32CT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 5,081
- In Stock ：
- 5,081
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Width :
- 6.2mm
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 15W
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 15W
- Voltage - Rated DC :
- -100V
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-252AA
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Height :
- 2.4mm
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- -1.2V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- MJD32
- Current - Collector Cutoff (Max) :
- 50μA
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Length :
- 6.6mm
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 20
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 3A
- Number of Terminations :
- 2
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Current Rating :
- -3A
- Datasheets
- MJD32CT4
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PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD32CT4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is -1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
MJD32CT4 Applications
There are a lot of STMicroelectronics
MJD32CT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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