MJD32CG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

100V

Collector Emitter Saturation Voltage :

1.2V

Lead Free :

Lead Free

Gain Bandwidth Product :

3MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Operating Temperature :

-65°C~150°C TJ

Number of Elements :

1

Weight :

4.535924g

Width :

6.223mm

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

2.3876mm

Emitter Base Voltage (VEBO) :

5V

Frequency :

3MHz

Transition Frequency :

3MHz

Case Connection :

COLLECTOR

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

-100V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Length :

6.7056mm

Pin Count :

3

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

50μA

Collector Base Voltage (VCBO) :

100V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Power Dissipation :

1.56W

Current Rating :

-3A

Number of Pins :

3

Terminal Form :

Gull wing

Polarity/Channel Type :

PNP

Number of Terminations :

2

REACH SVHC :

No SVHC

Radiation Hardening :

No

Published :

2001

hFE Min :

25

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Packaging :

Tube

Collector Emitter Breakdown Voltage :

100V

Pbfree Code :

yes

Max Power Dissipation :

1.56W

Max Collector Current :

3A

Base Part Number :

MJD32