MJD32C1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

6.8mm

Radiation Hardening :

No

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

REACH SVHC :

No SVHC

hFE Min :

10

Pbfree Code :

yes

Max Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Width :

6.2mm

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

3MHz

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pin Count :

4

Height :

2.4mm

Max Power Dissipation :

1.56W

Gain Bandwidth Product :

3MHz

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

100V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

1

Number of Terminations :

2

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Type :

GENERAL PURPOSE

Power - Max :

15W

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Collector Base Voltage (VCBO) :

100V

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

3A

Terminal Form :

Gull wing

Factory Lead Time :

21 Weeks

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

1.2V

Lead Free :

Lead Free

JESD-609 Code :

e3

Published :

2012