MJD31CT4G
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- Mfr.Part #
- MJD31CT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 59
- In Stock ：
- 59
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 3MHz
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Voltage - Rated DC :
- 100V
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1.2V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 3A
- Max Power Dissipation :
- 1.56W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.22mm
- Max Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Length :
- 6.73mm
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 3A
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MJD31
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Published :
- 2005
- Gain Bandwidth Product :
- 3MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Power Dissipation :
- 1.56W
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 100V
- Current - Collector Cutoff (Max) :
- 50μA
- ECCN Code :
- EAR99
- hFE Min :
- 25
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Height :
- 2.38mm
- Datasheets
- MJD31CT4G
NPN -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD31CT4G Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
MJD31CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CT4G Applications
There are a lot of ON Semiconductor
MJD31CT4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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