MJD31CT4-A
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- Mfr.Part #
- MJD31CT4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 15,272
- In Stock ：
- 15,272
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 50μA
- Max Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number :
- MJD31
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Max Power Dissipation :
- 15W
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 15W
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Datasheets
- MJD31CT4-A
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NPN 150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD31CT4-A Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
MJD31CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD31CT4-A Applications
There are a lot of STMicroelectronics
MJD31CT4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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